BCD devices and processes are optimized for both precision-analog and power functions. BCD Semi continuously offers devices and processes with improving characteristics and updated options, such as: - All collectors base and emitter junctions by ion implant for accurate doping control;
- Vertical and lateral PNPs optional;
- Capacitor optional;
- Double-level metallization for high-density, high-current layouts and buried Zener reference;
Bipolar Process:
(1.5um, 15V)
(2um, 18V)
(2um, 36V)
(4um, 25V)
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